New release sharpens ASM Epsilon 300 tool for advanced nodes

Edited by ad hoc news New Releases & Launches Desk. Reviewed before publication on 06/15/2026 at 9:30 PM ET. Details in the imprint.

ASM is tightening its focus on advanced-node epitaxy with the latest configuration of its Epsilon 300 single-wafer reactor, positioning the system as a high-throughput workhorse for 200 mm and 300 mm fabs that are pushing toward more complex logic and power devices. The tool targets demanding applications such as silicon-germanium (SiGe) channels, silicon carbide (SiC) and advanced power device structures where uniform film thickness and low defectivity are critical for yield.

What ASM’s Epsilon 300 brings to advanced-node fabs

The Epsilon 300 family is ASM’s flagship single-wafer epitaxial reactor platform, designed for 200 mm and 300 mm wafers and optimized to deliver tight within-wafer and wafer-to-wafer uniformity at high throughput for both logic and power semiconductor lines. According to ASM’s official product information, the platform supports a wide range of epitaxial films including silicon, SiGe, silicon-phosphorus, silicon-carbon and silicon carbide, with configurations that can be tuned to specific device roadmaps and fab requirements. ASM’s product page for the Epsilon 300 platform describes the system as suitable for both high-volume manufacturing and specialty processes in advanced nodes.

The system is built around a single-wafer reactor architecture that enables precise temperature and gas-flow control, key parameters for epitaxial growth processes where nanometer-level deviations can translate into performance shifts at the device level. ASM’s design incorporates a compact reactor chamber and optimized gas delivery aimed at reducing consumption of precursor gases and improving cost of ownership while maintaining throughput metrics that match high-volume fab requirements. For foundries and integrated device manufacturers, the ability to combine tight process control with high uptime is a central selling point for tools in this class.

Beyond core hardware, the latest Epsilon 300 configurations integrate advanced process control and data interfaces intended to fit into modern fab automation environments. That includes support for recipe management, traceability and integration with factory MES systems to streamline high-mix production where lines handle multiple product types and device generations. Industry coverage of ASM’s epitaxy portfolio notes that the company has emphasized compatibility with both existing 200 mm lines and newer 300 mm fabs, allowing customers to deploy similar process technologies across different wafer sizes as they migrate products over time. A recent analysis of ASM’s equipment portfolio highlighted epitaxy systems such as Epsilon as a contributor to the company’s push into advanced-node logic and power devices. A Nikkei Asia report on chip equipment suppliers points to rising demand for power-device-focused deposition tools.

On the process side, ASM positions the Epsilon 300 as capable of handling low-temperature epitaxy steps that support strain engineering and channel formation in advanced CMOS nodes, as well as higher-temperature processes used in power and automotive devices. That flexibility is important as automotive and industrial customers introduce more complex silicon and compound semiconductor structures into their designs. For fabs, a tool that can be configured for multiple epitaxial stacks can reduce the need for separate platforms and simplify maintenance, especially in lines where both leading-edge logic and more mature-node products are running side by side.

The tool’s relevance extends beyond pure technology metrics into manufacturing economics. Epitaxy steps are often among the more expensive process modules in a line because of precursor gas usage, long process times and tight yield windows. By refining temperature uniformity, gas utilization and chamber design, ASM is targeting lower cost per wafer while preserving the thin-film characteristics that device engineers specify. For customers weighing capital spending on deposition equipment, the interplay between capital cost, operating cost and yield contribution is central to deciding which platform to adopt for a given node or product family.

From a portfolio perspective, the Epsilon 300 sits alongside ASM’s other deposition platforms, including atomic layer deposition (ALD) and plasma-enhanced tools, forming part of a broader offering that addresses critical thin-film steps in front-end processing. The company highlights epitaxy as one of its strategic growth areas, tied to trends like vehicle electrification, 5G infrastructure and data center expansion that require both efficient power devices and high-performance logic chips. In its recent investor presentations, ASM has pointed to a growing share of revenue coming from advanced-node deposition equipment, underscoring the importance of tools such as the Epsilon family in its long-term positioning. ASM’s investor presentation materials outline epitaxy and ALD as key focus segments within its product mix.

Within ASM’s overall business, epitaxy tools like the Epsilon 300 are part of the company’s push to supply more process-critical equipment into advanced foundries and IDMs, a strategy meant to diversify beyond traditional deposition roles and deepen engagement with leading customers. Shares of ASM (ISIN NL0000334118) traded on Euronext Amsterdam at EUR 602.40 on 06/13/2026, reflecting investor focus on demand for semiconductor capital equipment and the company’s exposure to advanced-node investments.

This article was a.i.-assisted and editorially reviewed. Product information without warranty; prices and availability may change at short notice. Not investment advice and not a buy or sell recommendation. Trading involves risk up to and including the total loss of invested capital.